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| FT2000AA ... FT2000KG FT2000AA ... FT2000KG Superfast Silicon Rectifiers - Single Diode / Two Polarities Superschnelle Silizium-Gleichrichter - Einzeldiode / Zwei Polaritaten Version 2007-06-27 100.2 4 15.7 3.8 Type Typ Nominal current Nennstrom 4 20 A 50...400 V TO-220AC 1.8 g A 3 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehause Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen 3 3 3.4 1 1 13.2 4 1.5 0.9 5.08 Dimensions - Mae [mm] K 3 1 Maximum ratings and Characteristics Type / Typ Polarity / Polaritat K (Standard) FT2000KA FT2000KB FT2000KD FT2000KG A (Reverse) FT2000AA FT2000AB FT2000AD FT2000AG 50 100 200 400 50 100 200 400 TC = 100C f > 15 Hz TA = 25C TA = 25C Repet. peak reverse voltage Surge peak reverse volt. Period. Spitzensperrspanng. Stospitzensperrspanng. VRRM [V] VRSM [V] Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A < 0.84 < 0.84 < 0.84 < 0.84 IFAV IFRM IFSM i2t IF = 20 A < 0.96 < 0.96 < 0.96 < 0.96 20 A 80 A 2) 375/390 A 680 A2s Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature - Sperrschichttemperatur at reduced reverse voltage bei reduzierter Sperrspannung Storage temperature - Lagerungstemperatur VR 80% VRRM VR 20% VRRM Tj Tj TS -50...+150C -50...+200C -50...+175C 1 2 Tj = 25C Max. temperature of the case TC = 100C - Max. Temperatur des Gehauses TC = 100C http://www.diotec.com/ (c) Diotec Semiconductor AG 1 FT2000AA ... FT2000KG Characteristics Leakage current Sperrstrom Reverse recovery time Sperrverzug Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause Tj = 25C VR = VRRM IR Kennwerte < 25 A < 200 ns < 1.5 K/W IF = 0.5 A through/uber trr IR = 1 A to IR = 0.25 A RthC 120 [%] 100 Vr < 20% Vrrm 103 [A] 102 Tj = 125C 80 10 Vr < 80% Vrrm Tj = 25C 60 40 1 20 IFAV 0 0 TC 50 100 150 [C] IF 10-1 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Temp. des Gehauses 400a-(5a-0,8v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 2 http://www.diotec.com/ (c) Diotec Semiconductor AG |
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